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Advanced Materials

Cathodic and Anodic Material Diffusion in Polymer/Semiconductor-Nanocrystal Composite Devices

Authors


  • We would like to thank Mr Richard J. Chater, from Imperial College in London, for his assistance with SIMS analyses.

Abstract

Electrode material diffusion in polymer/nanoparticle composite devices has been detected after the application of high electric fields (107 V m–1). Composition depth profiles obtained with SIMS show diffusion of material from both the aluminium cathode and the ITO anode. This diffusion can cause device failure even in low current regimes. The growth of the aluminium oxide is explained in terms of the Mott model.

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