The work is supported by Zernike Institute for Advanced Materials, University of Groningen, The Netherlands.
Nanoscale Electrolytic Switching in Phase-Change Chalcogenide Films†
Article first published online: 23 NOV 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 24, pages 4431–4437, December, 2007
How to Cite
Pandian, R., Kooi, B. J., Palasantzas, G., De Hosson, J. T. M. and Pauza, A. (2007), Nanoscale Electrolytic Switching in Phase-Change Chalcogenide Films. Adv. Mater., 19: 4431–4437. doi: 10.1002/adma.200700904
- Issue published online: 11 DEC 2007
- Article first published online: 23 NOV 2007
- Manuscript Revised: 20 AUG 2007
- Manuscript Received: 16 APR 2007
- Zernike Institute for Advanced Materials, University of Groningen
- Data Storage;
- Phase-Change Materials;
- Thin Films
Reversible polarity-dependent resistance (PDR) switching in phase-change (PC) films is feasible. Nanometer-scale crystalline marks are produced in amorphous Ge2Sb2+xTe5 films by electrical pulses through an AFM tip. In these marks, PDR switching is demonstrated with three orders of magnitude current contrast using less than 1.5 V. No current contrast between the crystalline marks in the high- resistance state and the amorphous background is observed.