The work was supported by the System IC 2010 program of the Korean government. The authors would like to acknowledge fruitful discussions with S. Hoffmann-Eifert at Forschungszentrum Jülich. Supporting Information is available online from Wiley InterScience or from the author.
Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors†
Version of Record online: 20 MAR 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 20, Issue 8, pages 1429–1435, April 21, 2008
How to Cite
Kim, S. K., Choi, G.-J., Lee, S. Y., Seo, M., Lee, S. W., Han, J. H., Ahn, H.-S., Han, S. and Hwang, C. S. (2008), Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors. Adv. Mater., 20: 1429–1435. doi: 10.1002/adma.200701085
- Issue online: 21 APR 2008
- Version of Record online: 20 MAR 2008
- Manuscript Revised: 5 DEC 2007
- Manuscript Received: 5 MAY 2007
Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200701085_s.pdf or from the author.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.