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High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential

Authors

  • J. H. Gao,

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School, Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • R. J. Li,

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School, Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • L. Q. Li,

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School, Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • Q. Meng,

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    2. Graduate School, Chinese Academy of Sciences, Beijing 100039 (P.R. China)
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  • H. Jiang,

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • H. X. Li,

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • W. P. Hu

    1. Beijing National laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • The authors acknowledge financial support from the National Natural Science Foundation of China (20421101, 20404013, 20402015, 20571079, 20472089), the Ministry of Science and Technology of China (2006CB806200, 2006CB932100), and the Chinese Academy of Sciences.

Abstract

original image

Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca. 36 °C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics.

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