The authors acknowledge financial support from the National Natural Science Foundation of China (20421101, 20404013, 20402015, 20571079, 20472089), the Ministry of Science and Technology of China (2006CB806200, 2006CB932100), and the Chinese Academy of Sciences.
High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential†
Article first published online: 6 SEP 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 19, pages 3008–3011, October, 2007
How to Cite
Gao, J. H., Li, R. J., Li, L. Q., Meng, Q., Jiang, H., Li, H. X. and Hu, W. P. (2007), High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential. Adv. Mater., 19: 3008–3011. doi: 10.1002/adma.200701167
- Issue published online: 1 OCT 2007
- Article first published online: 6 SEP 2007
- Manuscript Revised: 22 JUN 2007
- Manuscript Received: 14 MAY 2007
- National Natural Science Foundation of China. Grant Numbers: 20421101, 20404013, 20402015, 20571079, 20472089
- Ministry of Science and Technology of China. Grant Numbers: 2006CB806200, 2006CB932100
- Chinese Academy of Sciences
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