Tunable n-Type Conductivity and Transport Properties of Ga-doped ZnO Nanowire Arrays

Authors

  • G.-D. Yuan,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • W.-J. Zhang,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • J.-S. Jie,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
    2. School of Science, Hefei University of Technology, Hefei 230009, Anhui (P.R. China)
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  • X. Fan,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • J.-X. Tang,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • I. Shafiq,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • Z.-Z. Ye,

    1. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (P.R. China)
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  • C.-S. Lee,

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • S.-T. Lee

    1. Center Of Super-Diamond and Advanced Films (COSDAF) and, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P.R. China)
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  • The work was supported by the Research Grants Council of Hong Kong SAR, China (Project Nos. N_CityU125/05 and CityU 115905), the strategic Research Grant of the City University of Hong Kong (Project No. 7001937), and the National Research Program of China (Grant No. 2006CB933000).

Abstract

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Well-aligned ZnO nanowires (NWs) with tunable n-type conductivity are synthesized by introducing Ga2O3 as a dopant source in thermal evaporation. The crystallographic orientation of the NWs depends on the dopant content. Electrical transport property measurements on single nanowires verify that the resistivity of ZnO NWs can be controlled, with high reproducibility, by the Ga impurities.

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