This work was supported by BASF AG. M. W. thanks the Fonds der Chemischen Industrie for a Liebig fellowship. Supporting Information is available online from Wiley InterScience or from the authors.
Core-Fluorinated Perylene Bisimide Dyes: Air Stable n-Channel Organic Semiconductors for Thin Film Transistors with Exceptionally High On-to-Off Current Ratios†
Article first published online: 5 NOV 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 21, pages 3692–3695, November, 2007
How to Cite
Schmidt, R., Ling, M. M., Oh, J. H., Winkler, M., Könemann, M., Bao, Z. and Würthner, F. (2007), Core-Fluorinated Perylene Bisimide Dyes: Air Stable n-Channel Organic Semiconductors for Thin Film Transistors with Exceptionally High On-to-Off Current Ratios. Adv. Mater., 19: 3692–3695. doi: 10.1002/adma.200701478
- Issue published online: 5 NOV 2007
- Article first published online: 5 NOV 2007
- Manuscript Revised: 19 JUL 2007
- Manuscript Received: 20 JUN 2007
- BASF AG
- Semiconductors, organic;
- Thin-film transistors
Two core-fluorinated perylene bisimide semiconductors have been synthesized and n-channel field effect transistors have been fabricated by vapor-deposition techniques. Charge carrier mobilities as high as 0.34 cm2V-1s-1 and unprecedented on-to-off current ratios around 107 have been measured for these devices in air.