Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

Authors

  • M. A. Mastro,

    1. Dr. R. T. Holm, Dr. R. L. Henry, U.S. Naval Research Laboratory, Electronics Science & Technology Division, Code 6882, 4555 Overlook Ave. SW, Washington, DC 20375 (USA)
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  • J. D. Caldwell,

    1. Dr. R. T. Holm, Dr. R. L. Henry, U.S. Naval Research Laboratory, Electronics Science & Technology Division, Code 6882, 4555 Overlook Ave. SW, Washington, DC 20375 (USA)
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  • R. T. Holm,

    1. Dr. R. T. Holm, Dr. R. L. Henry, U.S. Naval Research Laboratory, Electronics Science & Technology Division, Code 6882, 4555 Overlook Ave. SW, Washington, DC 20375 (USA)
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  • R. L. Henry,

    1. Dr. R. T. Holm, Dr. R. L. Henry, U.S. Naval Research Laboratory, Electronics Science & Technology Division, Code 6882, 4555 Overlook Ave. SW, Washington, DC 20375 (USA)
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  • C. R. Eddy Jr.

    1. Dr. R. T. Holm, Dr. R. L. Henry, U.S. Naval Research Laboratory, Electronics Science & Technology Division, Code 6882, 4555 Overlook Ave. SW, Washington, DC 20375 (USA)
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  • Research at the Naval Research Lab is partially supported by the Office of Naval Research.

Abstract

original image

A GaN resonant cavity light emitting diode was built on a GaN/AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a semi-transparent metal contact design, and up to eight times for a flip-chip design.

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