Spontaneously formed nano-pits are exploited to effectively control the incorporation of gold nanocrystals (NCs) at the surface of light emitting InGaN/GaN heterostructures. Nano- engineering either the NCs size, or pit size, allows the number of NCs incorporated in each pit to be controlled, thus enabling research of well-defined assemblies of few gold NCs using an optically and electrically active substrate (see figure). The development of new nano-devices based on such hybrid nanostructures is briefly discussed.
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