High-Surface-Area Mesoporous Germanium from Oxidative Polymerization of the Deltahedral [Ge9]4– Cluster: Electronic Structure Modulation with Donor and Acceptor Molecules


  • This work was supported by NSF. We thank K. Chapman and P. Chupas (ANL) for help with the handling the PDF data. Supporting Information is available online from Wiley Interscience or from the authors


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A high-surface-area mesoporous germanium is prepared by a new straightforward method that involves oxidative polymerization and no linking agents or external oxidants. The electronic structure of this Ge semiconductor exhibits reversible change towards absorption of various donor and acceptor organic molecules.