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Evidence of Large Voids in Pure-Silica-Zeolite Low-k Dielectrics Synthesized by Spin-on of Nanoparticle Suspensions

Authors

  • Salvador Eslava,

    1. Interuniversitary MicroElectronic Center (IMEC) Kapeldreef 75, 3001 Leuven (Belgium)
    2. Centrum voor Oppervlaktechemie en Katalyse Katholieke Universiteit Leuven Kasteelpark Arenberg 23, 3001 Leuven (Belgium)
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  • Mikhail R. Baklanov,

    Corresponding author
    1. Interuniversitary MicroElectronic Center (IMEC) Kapeldreef 75, 3001 Leuven (Belgium)
    • Interuniversitary MicroElectronic Center (IMEC) Kapeldreef 75, 3001 Leuven (Belgium).
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  • Alexander V. Neimark,

    1. Department of Chemical and Biochemical Engineering, Rutgers The State University of New Jersey 98 Brett Road, Piscataway, NJ 08854-8058 (USA)
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  • Francesca Iacopi,

    1. Interuniversitary MicroElectronic Center (IMEC) Kapeldreef 75, 3001 Leuven (Belgium)
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  • Christine E. A. Kirschhock,

    1. Centrum voor Oppervlaktechemie en Katalyse Katholieke Universiteit Leuven Kasteelpark Arenberg 23, 3001 Leuven (Belgium)
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  • Karen Maex,

    1. Interuniversitary MicroElectronic Center (IMEC) Kapeldreef 75, 3001 Leuven (Belgium)
    2. Present address: Department of Electrical Engineering (ESAT-INSYS), Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
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  • Johan A. Martens

    Corresponding author
    1. Centrum voor Oppervlaktechemie en Katalyse Katholieke Universiteit Leuven Kasteelpark Arenberg 23, 3001 Leuven (Belgium)
    • Centrum voor Oppervlaktechemie en Katalyse Katholieke Universiteit Leuven Kasteelpark Arenberg 23, 3001 Leuven (Belgium).
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  • We thank Dr. A. Aerts for scientific discussions on nitrogen adsorption. C.E.A.K. and J.A.M. acknowledge the Flemish government for a concerted research action (GOA).

Abstract

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Spin-on pure-silica-zeolite or Silicalite films are currently considered as outstanding low-k materials because of their stiffness and ultralow dielectric constant. It is shown that spin-on Silicalite films with low k values unavoidably contain cavities tens of nanometers wide, representing a considerable challenge in their application as on-chip interconnects.

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