Nanofluidic Bipolar Transistors


  • Irradiation with swift heavy ions was performed at the Gesellschaft fuer Schwerionenforschung (GSI), Darmstadt, Germany. We thank the Alfred P. Sloan Foundation and the Institute for Complex Adaptive Matter for financial support.


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The preparation of a bipolar ionic transistor based on a single hourglass-shaped nanopore with tailored surface charge is shown. The narrow opening of the pore was between 2 and 6 nm. The gate in our device and the device on/off behavior are controlled chemically by changing the surface charge on the pore walls. This was accomplished by changing pH and concentrations of the electrolyte.