Gate-Controlled Light Emitting Diodes

Authors


  • Support for research work presented in this manuscript is provided by the Air Force Office of Scientific Research (Charles Lee, Program Officer). We thank Dr. Yan Shao and Dr. S. Cho for the technical help and useful discussions.

Abstract

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The structure and operation of a gate-controlled LED is reported (see figure). The device is properly described as a unipolar organic transistor in series with an OLED. Light emission was visible with brightness exceeding 310 cd m−2 at external quantum efficiency of 0.5%; the brightness is controlled by the gate voltage.

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