Official contribution of the National Institute of Standards and Technology; not subject to copyright in the United States. This work is supported in part by NIST Office of Microelectronic Program, University of Michigan, the System IC 2010 Project of Korea, and the Chemistry and Molecular Engineering Program of Brain Korea 21 Project. We also acknowledge the Nanofabrication Laboratory of the Center for Nanoscale Science and Technology (CNST) in NIST for providing facilities for the NIL process.
Self-Sealing of Nanoporous Low Dielectric Constant Patterns Fabricated by Nanoimprint Lithography†
Article first published online: 15 APR 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 20, Issue 10, pages 1934–1939, May 19, 2008
How to Cite
Ro, H. W., Peng, H., Niihara, K.-i., Lee, H.-J., Lin, E. K., Karim, A., Gidley, D. W., Jinnai, H., Yoon, D. Y. and Soles, C. L. (2008), Self-Sealing of Nanoporous Low Dielectric Constant Patterns Fabricated by Nanoimprint Lithography. Adv. Mater., 20: 1934–1939. doi: 10.1002/adma.200701994
- Issue published online: 23 MAY 2008
- Article first published online: 15 APR 2008
- Manuscript Revised: 30 NOV 2007
- Manuscript Received: 9 JUL 2007
- porous materials
The cross-sectional TEM image shows that line-space patterns can be directly imprinted, with high fidelity, into highly porous spin-on organosilicate materials. This publication quantifies how the porosity and distribution of pores within the patterns are affected by the nanoimprint lithography processes, including evidence for a densified pattern surface.