Official contribution of the National Institute of Standards and Technology; not subject to copyright in the United States. This work is supported in part by NIST Office of Microelectronic Program, University of Michigan, the System IC 2010 Project of Korea, and the Chemistry and Molecular Engineering Program of Brain Korea 21 Project. We also acknowledge the Nanofabrication Laboratory of the Center for Nanoscale Science and Technology (CNST) in NIST for providing facilities for the NIL process.
Communication
Self-Sealing of Nanoporous Low Dielectric Constant Patterns Fabricated by Nanoimprint Lithography†
Article first published online: 15 APR 2008
DOI: 10.1002/adma.200701994
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Ro, H. W., Peng, H., Niihara, K.-i., Lee, H.-J., Lin, E. K., Karim, A., Gidley, D. W., Jinnai, H., Yoon, D. Y. and Soles, C. L. (2008), Self-Sealing of Nanoporous Low Dielectric Constant Patterns Fabricated by Nanoimprint Lithography. Advanced Materials, 20: 1934–1939. doi: 10.1002/adma.200701994
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Publication History
- Issue published online: 23 MAY 2008
- Article first published online: 15 APR 2008
- Manuscript Revised: 30 NOV 2007
- Manuscript Received: 9 JUL 2007
- Abstract
- References
- Cited By
Keywords:
- nanolithography;
- organosilicates;
- patterning;
- porous materials
Graphical Abstract

The cross-sectional TEM image shows that line-space patterns can be directly imprinted, with high fidelity, into highly porous spin-on organosilicate materials. This publication quantifies how the porosity and distribution of pores within the patterns are affected by the nanoimprint lithography processes, including evidence for a densified pattern surface.

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