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Advanced Materials

Fabrication of Highly Ordered Silicon Oxide Dots and Stripes from Block Copolymer Thin Films

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  • This work was supported by the U.S. Department of Energy (DOE), the NSF supported MRSEC and NSEC at the University of Massachusetts Amherst, and S.P. was supported by a Korea Research Foundation Grant funded by the Korean Government (KRF-2006-214-D00047).

Abstract

A general route to fabricate highly ordered arrays of nanoscopic silicon oxide dots and stripes (see figure) from block copolymer thin films is described. Poly(styrene-b-4-vinylpyridine) thin films with cylindrical microdomains oriented normal and parallel to the surface were used as templates for the fabrication of nanoscopic silicon oxide, with polydimethylsiloxane as the inorganic precursor.

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