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Indium Nanowires Synthesized at an Ultrafast Rate


  • S.S.O. and D.H.K. contributed equally to this work. The authors thank the Korea Basic Science Institute for HVEM measurements. This work was supported in part by the Ministry of Education through the BK21 Program (K.H.O., M.K., E.Y.), the ERC (Center for Materials and Processes of Self-Assembly) program of MOST/KOSEF (R11-2005-048-00000-0 (E.Y.)) and by a KOSEF grant funded by the Korean government (MOST; No. R01-207-000-10032-0 (D.H.K., K.H.O.) and R0A-2007-000-10014-0 (M.K.)). The work was also supported in part by the KIST project, contract number 2E20200 (M.W.M.), and in part by the School of Engineering and Applied Sciences (A.V., J.W.H.). Supporting Information is available online from Wiley InterScience or from the authors.


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Indium nanowires are grown on InGaN substrates at an ultrafast rate by using direct irradiation by a focused ion beam (see figure). The diameter and length of the synthesized nanowires, as well as their growth rate, can be effectively controlled by selecting the energy of the ion beam. Nanowires are synthesized on selected areas of the substrate by controlling the regions exposed to the ion beam using maskless patterning.

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