High-Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films

Authors

  • Seungchel Choi,

    1. Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, National Center for Nanomaterials Technology, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science Pohang University of Science & Technology Pohang 790-784 (Korea)
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  • Sang-Hyun Hong,

    1. Department of Electronic and Electrical Engineering, Pohang University of Science & Technology, Pohang 790-784 (Korea)
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  • Shin Hyo Cho,

    1. Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, National Center for Nanomaterials Technology, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science Pohang University of Science & Technology Pohang 790-784 (Korea)
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  • Samdae Park,

    1. Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, National Center for Nanomaterials Technology, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science Pohang University of Science & Technology Pohang 790-784 (Korea)
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  • Su-Moon Park,

    1. Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, National Center for Nanomaterials Technology, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science Pohang University of Science & Technology Pohang 790-784 (Korea)
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  • Ohyun Kim,

    1. Department of Electronic and Electrical Engineering, Pohang University of Science & Technology, Pohang 790-784 (Korea)
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  • Moonhor Ree

    Corresponding author
    1. Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, National Center for Nanomaterials Technology, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science Pohang University of Science & Technology Pohang 790-784 (Korea)
    • Department of Chemistry, National Research Lab for Polymer Synthesis and Physics, National Center for Nanomaterials Technology, Center for Integrated Molecular Systems, Polymer Research Institute, and BK School of Molecular Science Pohang University of Science & Technology Pohang 790-784 (Korea)
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  • S. C. and S.-H. H. contributed equally to this work. This study was supported by the Samsung Electronics Company, the Korea Science & Engineering Foundation (National Research Lab Program and Center for Integrated Molecular Systems), and the Ministry of Education (BK21 Program).

Abstract

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Electrically programmable fuse-type polymer memory devices based on hyperbranched copper phthalocyanine polymer thin films are fabricated. The devices have novel write-once-read-many (WORM) memory characteristics, with a high ON/OFF current ratio (of 106) and a high electrical stability, thus opening up the possibility of a low-cost mass production of high-performance, nonvolatile polymer memory devices.

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