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Advanced Materials

Water-Soluble Polyfluorenes as an Electron Injecting Layer in PLEDs for Extremely High Quantum Efficiency

Authors

  • Seung-Hwan Oh,

    1. Department of Materials Science and Engineering Heeger Center for Advanced Materials (HCAM) Gwangju Institute of Science and Technology (GIST) 1 Oryong-Dong, Buk-Gu, Gwangju 500-712 (Korea)
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  • Doojin Vak,

    1. Department of Materials Science and Engineering Heeger Center for Advanced Materials (HCAM) Gwangju Institute of Science and Technology (GIST) 1 Oryong-Dong, Buk-Gu, Gwangju 500-712 (Korea)
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  • Seok-In Na,

    1. Department of Materials Science and Engineering Heeger Center for Advanced Materials (HCAM) Gwangju Institute of Science and Technology (GIST) 1 Oryong-Dong, Buk-Gu, Gwangju 500-712 (Korea)
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  • Tae-Woo Lee,

    1. Samsung Advanced Institute of Technology (SAIT) Mt. 14-1, Nongseo-dong, Giheung-gu, Yongin-Si, Gyeonggi-do, 449-712 (Korea)
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  • Dong-Yu Kim

    Corresponding author
    1. Department of Materials Science and Engineering Heeger Center for Advanced Materials (HCAM) Gwangju Institute of Science and Technology (GIST) 1 Oryong-Dong, Buk-Gu, Gwangju 500-712 (Korea)
    • Department of Materials Science and Engineering Heeger Center for Advanced Materials (HCAM) Gwangju Institute of Science and Technology (GIST) 1 Oryong-Dong, Buk-Gu, Gwangju 500-712 (Korea)
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  • This work was supported by the Ministry of Education of Korea through the Brain Korea 21 program, and by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. The program was funded by the Korean government (MOST) (M10500000077-06J0000-07710), and the MOCIE (Ministry of Commerce, Industry and Energy of the Korea Government) (10022811).

Abstract

A cationic water-soluble polyfluorene containing ion-transporting side groups and mobile metal ions is synthesized. The material is used as an electron injection layer in polymer light-emitting diodes with high-work-function Al cathodes. The devices show high quantum efficiencies (see figure), with a maximum external quantum efficiency of 4.8%, approaching the theoretical maximum external quantum efficiency of about 5%.

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