Pliant covalent-network SiO2 must be replaced by a high-dielectric constant (high-k) compound in silicon transistor gates. The known high-k dielectrics; however, are all rigid ionic crystals. We have discovered a new class of high-k oxides that emulates pliancy of the native SiO2 and self-constructs epitaxial films on silicon after annealing at ∼1030°C.
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