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Advanced Materials

Pliant Epitaxial Ionic Oxides on Silicon

Authors

  • Dmitry Kukuruznyak,

    Corresponding author
    1. Advanced Electronic Materials Centre, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
    2. Present address: Department Dosch, Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, 70569 Stuttgart, Germany
    • Advanced Electronic Materials Centre, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan).
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  • Harald Reichert,

    1. Department Dosch, Max-Planck-Institut für Metallforschung Heisenbergstr. 3, 70569 Stuttgart (Germany)
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  • Kenji Ohmori,

    1. Advanced Electronic Materials Centre, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
    2. Present address: Nano Technology Research Laboratory, Waseda University, Bldg 120-5, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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  • Parhat Ahmet,

    1. Advanced Electronic Materials Centre, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
    2. Present address: Frontier Collaborative Research Centre, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan
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  • Toyohiro Chikyow

    1. Advanced Electronic Materials Centre, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
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  • This work has been funded by the National Institute for Materials Science (Japan) in the project “Combinatorial Materials Exploration and Technology” and by the “Core-to-Core Program” of the Japan Society for Promotion of Science. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

Pliant covalent-network SiO2 must be replaced by a high-dielectric constant (high-k) compound in silicon transistor gates. The known high-k dielectrics; however, are all rigid ionic crystals. We have discovered a new class of high-k oxides that emulates pliancy of the native SiO2 and self-constructs epitaxial films on silicon after annealing at ∼1030°C.

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