Versatile Use of Vertical-Phase-Separation-Induced Bilayer Structures in Organic Thin-Film Transistors


  • This work was supported by a grant (F0004022-2007-23) from the Information Display R&D Center under the 21st Century Frontier R&D Program, the ERC Program of MOST/KOSEF (R11- 2003-006-05004-0), POSTECH Core Research Program, Pohang Accelerator Laboratory (8c1 and 10c1 beam lines), and the BK21 Program of the Ministry of Education and Human Resources Development of Korea. Supporting Information is available online from Wiley InterScience or from the authors.


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A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly(3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.