A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly(3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.
If you can't find a tool you're looking for, please click the link at the top of the page to "Go to old article view". Alternatively, view our Knowledge Base articles for additional help. Your feedback is important to us, so please let us know if you have comments or ideas for improvement.