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Advanced Materials

Two-Dimensional Patterning of Flexible Designs with High Half-Pitch Resolution by Using Block Copolymer Lithography

Authors

  • Toru Yamaguchi,

    Corresponding author
    1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198 (Japan)
    • NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198 (Japan).
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  • Hiroshi Yamaguchi

    1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198 (Japan)
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  • This research was partly supported by JSPS KAKENHI (16206003). The authors thank J. Hayashi for the sample preparation, and K. Inokuma (NTT Advanced Technology), and Dr. K. Yamazaki for the EB exposure. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

A two-dimensional patterning method that allows for flexible designs is demonstrated by combining bottom-up diblock copolymer self-assembly with top-down electron beam lithography (EBL), which increases the applicability of block copolymer lithography to nanodevice fabrication. Both bent lamellae and concentric cylinders (see figure) can be formed between the intentionally designed 2D EBL guiding patterns, and can be successfully transferred to a semiconductor substrate with a 16 nm half-pitch resolution.

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