High-Performance Thin-Film Transistors from Solution-Processed Cadmium Selenide and a Self-Assembled Multilayer Gate Dielectric

Authors

  • Paul D. Byrne,

    1. Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA)
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  • Antonio Facchetti,

    Corresponding author
    1. Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA)
    • Department of Chemistry and Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA).
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  • Tobin J. Marks

    Corresponding author
    1. Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA)
    • Department of Chemistry and Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA).
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  • We thank the Army Aviation and Missile Command for support of this research (STTR TSI-2260-0674731//W31P4Q-O) and the Northwestern MRSEC (NSF DMR-0520513) for providing characterization facilities. We thank Dr. S. Morrison of Triton Systems Inc. for helpful discussions and Dr. J. Carsello of the J. B. Cohen X-ray Diffraction Facility, Northwestern University, for X-ray diffraction advice. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

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TFTs based on solution-processed CdSe films as the semiconductor and a solution-processed nanoscopic self-assembled gate dielectric are fabricated. The devices exhibit high electron mobilities at low operating voltages.

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