We thank the Army Aviation and Missile Command for support of this research (STTR TSI-2260-0674731//W31P4Q-O) and the Northwestern MRSEC (NSF DMR-0520513) for providing characterization facilities. We thank Dr. S. Morrison of Triton Systems Inc. for helpful discussions and Dr. J. Carsello of the J. B. Cohen X-ray Diffraction Facility, Northwestern University, for X-ray diffraction advice. Supporting Information is available online from Wiley InterScience or from the authors.
High-Performance Thin-Film Transistors from Solution-Processed Cadmium Selenide and a Self-Assembled Multilayer Gate Dielectric†
Version of Record online: 14 MAY 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 20, Issue 12, pages 2319–2324, June 18, 2008
How to Cite
Byrne, P. D., Facchetti, A. and Marks, T. J. (2008), High-Performance Thin-Film Transistors from Solution-Processed Cadmium Selenide and a Self-Assembled Multilayer Gate Dielectric. Adv. Mater., 20: 2319–2324. doi: 10.1002/adma.200702677
- Issue online: 18 JUN 2008
- Version of Record online: 14 MAY 2008
- Manuscript Revised: 18 JAN 2008
- Manuscript Received: 26 OCT 2007
Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200702677_s.pdf or from the author.
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