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Advanced Materials

High-Current-Density CuO x/InZnOx Thin-Film Diodes for Cross-Point Memory Applications

Authors


  • B.S.K. is grateful to S. I. Kim, I. H. Song, and J. H. Hur for helpful discussions. B.H.P. was supported by the KOSEF NRL program grant funded by the Korea government (MEST) (No. R0A-2008-000-20052-0). Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

Room-temperature-deposited CuOxInZnOx thin-film heterojunction diodes show a high current density of 3.5 × 104 A cm−2 and a high on/off current ratio of 106 (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.

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