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Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons


  • This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (No. R17-2007-078-01000-0) and the Brain Korea 21 program.


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The electroluminescence intensity of a silicon quantum dot (Si QD) light-emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si QDs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.

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