We acknowledge partial support for this project from the Samsung Advanced Institute of Technology (SAIT) and the Air Force Office of Scientific Research. M.R. acknowledges partial support from NASA GSRP and from the Center for Polymeric Interfaces and Macromolecular Assemblies CPIMA. Z. L. acknowledges support from the Center for Integrated Systems (CIS) SEED project.
High-Performance Organic Thin-Film Transistors through Solution-Sheared Deposition of Small-Molecule Organic Semiconductors†
Article first published online: 2 JUN 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 20, Issue 13, pages 2588–2594, July 2, 2008
How to Cite
Becerril, H. A., Roberts, M. E., Liu, Z., Locklin, J. and Bao, Z. (2008), High-Performance Organic Thin-Film Transistors through Solution-Sheared Deposition of Small-Molecule Organic Semiconductors. Adv. Mater., 20: 2588–2594. doi: 10.1002/adma.200703120
- Issue published online: 8 JUL 2008
- Article first published online: 2 JUN 2008
- Manuscript Received: 14 DEC 2007
- organic semiconductors;
- organic thin films;
- solution processing;
- solution shearing
Solution shearing can deposit organic semiconductor thin films with large, aligned crystals from a range of materials. Top-contact transistors fabricated on solution-sheared thin films outperform equivalent devices fabricated through drop-casting. Our facile, versatile, and scalable technique requires small amounts of semiconductor material and can be used for large-area device fabrication, or as a rapid screening tool for high-mobility compounds.