Communication

Shape-Controlled Nanoarchitectures Using Nanowalls

  1. Young Joon Hong1,
  2. Hye Seong Jung1,
  3. Jinkyoung Yoo1,
  4. Yong-Jin Kim1,
  5. Chul-Ho Lee1,
  6. Miyoung Kim2,
  7. Gyu-Chul Yi1,3,†,*

Article first published online: 10 NOV 2008

DOI: 10.1002/adma.200703168

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 2, pages 222–226, January 12, 2009

Additional Information

How to Cite

Hong, Y. J., Jung, H. S., Yoo, J., Kim, Y.-J., Lee, C.-H., Kim, M. and Yi, G.-C. (2009), Shape-Controlled Nanoarchitectures Using Nanowalls. Adv. Mater., 21: 222–226. doi: 10.1002/adma.200703168

Author Information

  1. 1

    National Creative Research Initiative (CRI) Center for Semiconductor Nanorods and Department of Materials Science and Engineering, POSTECH Pohang, Gyeongbuk 790-784 (Korea)

  2. 2

    School of Materials Science and Engineering Seoul National University San 56-1 Seoul 151-744 (Korea)

  3. 3

    current address: Department of Physics and Astronomy, Seoul National University Seoul 151-747 (Korea)

  1. †

    current address: Department of Physics and Astronomy, Seoul National University Seoul 151-747 (Korea).

*National Creative Research Initiative (CRI) Center for Semiconductor Nanorods and Department of Materials Science and Engineering, POSTECH Pohang, Gyeongbuk 790-784 (Korea).

Publication History

  1. Issue published online: 2 JAN 2009
  2. Article first published online: 10 NOV 2008
  3. Manuscript Revised: 2 MAY 2008
  4. Manuscript Received: 20 DEC 2007

Funded by

  • National Creative Research Initiative Project. Grant Number: R16-2004-004-01001-0
  • Ministry of Science and Technology (MOST). Grant Number: R0A-2007-000-10014-0

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Keywords:

  • zinc oxide nanostructures;
  • light-emitting devices;
  • lithography;
  • surface patterning
Thumbnail image of graphical abstract

A novel method for shaping and positioning ZnO nanoarchitectures using conventional lithography and catalyst-free metal organic vapor-phase epitaxy is demonstrated. Nanowalls and nanotubes of desired shapes and arrangements can be grown heteroepitaxially on Si substrates, and their electron-emission characteristics were optimized by changing their diameter and spacing. This method can be readily expanded to create many artificial 1D and 2D structures, as required for various device applications.

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