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Chemical Control of Local Doping in Organic Thin-Film Transistors: From Depletion to Enhancement


  • Financial support by the Austrian Science Fund FWF through projects P17068-N02, P19959-N20, and in the framework of the Austrian Nano Initiative (Research Project Cluster 0700 – ISOTEC – Research Project Nos. 0701 and 0702) is gratefully acknowledged. We thank K. Pernstich and W. Kalb from the ETH Zürich and A. Klug, E. J. W. List, and P. Hadley from the TU Graz for fruitful discussions. We also thank Oliver Werzer, Heinz-Georg Flesch, and Roland Resel for the good cooperation concerning XRR experiments. Supporting Information is available online from Wiley InterScience or from the author.


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An organic field-effect transistor can be switched chemically from depletion (normally on) to enhancement (normally off) mode by inserting a reactive thin layer comprising sulfonyl chloride and sulfonic acid functionalities. Upon exposure of the devices to alkaline gases, such as ammonia, a shift of the threshold voltage of up to 60 V is achieved.

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