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Advanced Materials

Photoluminescent n-Type Porous Silicon Fabricated in the Dark

Authors

  • Shi Qiang Li,

    1. Department of Materials Science and Engineering, National University of Singapore, Block E3A, 7 Engineering Drive 1, 117574 (Singapore)
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  • T. L. Sudesh L. Wijesinghe,

    1. Department of Materials Science and Engineering, National University of Singapore, Block E3A, 7 Engineering Drive 1, 117574 (Singapore)
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  • Daniel J. Blackwood

    Corresponding author
    1. Department of Materials Science and Engineering, National University of Singapore, Block E3A, 7 Engineering Drive 1, 117574 (Singapore)
    • Department of Materials Science and Engineering, National University of Singapore, Block E3A, 7 Engineering Drive 1, 117574 (Singapore).
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  • This work is financed by the Agency for Science, Technology and Research (ASTAR, Singapore) under grant number 042 101 0083.

Abstract

A simple technique for the fabrication of optically active porous silicon (PSi) in the dark on n-type substrates is presented. This solves the long-standing problem that n-type photoluminsecnt porous silicon can only form under illumination. Strong visible red photoluminescence is demonstrated.

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