Fabrication of Vertically Aligned Single-Crystalline Boron Nanowire Arrays and Investigation of Their Field-Emission Behavior

Authors

  • Fei Liu,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Jifa Tian,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • Lihong Bao,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • Tianzhong Yang,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • Chenming Shen,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
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  • Xinyu Lai,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Ziming Xiao,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Weiguo Xie,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Saozi Deng,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Jun Chen,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Juncong She,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
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  • Nisheng Xu,

    Corresponding author
    1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China)
    • State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (P.R. China).
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  • Hongjun Gao

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (P.R. China)
    • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (P.R. China).
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  • This work is supported by the National Basic Research Program of China (973 Program, Grant No. 2007CB935500, 863 Program, Grant No. 2007AA03Z305), the National Joint Science Fund with Guangdong Province (Grant No. U0634002, U0734003), the Doctoral Foundation of Education Ministry of China (Grant No. 20070558063), the Science and Technology Department of Guangdong Province, the Education Department of Guangdong Province, and the Science and Technology Department of Guangzhou City.

Abstract

original image

Aligned single crystalline boron nanowire arrays are formed by thermal carbon reduction. The SEM image shows an array of boron nanowires (ca. 5 µm long) vertically aligned in high density on a Si substrate. These nanowires have a high enhancement factor, good emission stability, and can endure high current, which suggest they are an excellent candidate for field-emission applications.

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