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Advanced Materials

Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors

Authors

  • Chong-an Di,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China)
    2. Graduate School Chinese Academy of Sciences, Beijing 100039 (PR China)
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  • Dacheng Wei,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China)
    2. Graduate School Chinese Academy of Sciences, Beijing 100039 (PR China)
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  • Gui Yu,

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China)
    • Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China).
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  • Yunqi Liu,

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China)
    • Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China).
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  • Yunlong Guo,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China)
    2. Graduate School Chinese Academy of Sciences, Beijing 100039 (PR China)
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  • Daoben Zhu

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (PR China)
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  • This work is supported by the National Natural Science Foundation of China (60671047, 60736004, 50673093, 20421101), the Major State Basic Research Development Program (2006CB806203, 2006CB932103), and the Chinese Academy of Sciences.

Abstract

Graphene, which is a basic building block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.

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