Communication

Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer†

  1. Jang-Sik Lee1,*,
  2. Yong-Mu Kim1,
  3. Jeong-Hwa Kwon2,
  4. Hyunjung Shin1,
  5. Byeong-Hyeok Sohn2,*,
  6. Jaegab Lee1

Article first published online: 30 OCT 2008

DOI: 10.1002/adma.200800340

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 2, pages 178–183, January 12, 2009

Additional Information

How to Cite

Lee, J.-S., Kim, Y.-M., Kwon, J.-H., Shin, H., Sohn, B.-H. and Lee, J. (2009), Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer. Adv. Mater., 21: 178–183. doi: 10.1002/adma.200800340

Author Information

  1. 1

    School of Advanced Materials Engineering Kookmin University Seoul 136-702 (Korea)

  2. 2

    Department of Chemistry and NANO Systems Institute Seoul National University Seoul 151-747 (Korea)

*School of Advanced Materials Engineering Kookmin University Seoul 136-702 (Korea).

  1. †

    This work was supported by the Center for Materials and Processes of Self-assembly (R11-2005-048-00000-0) under the auspices of the ERC program of MEST/KOSEF; by the “SystemIC2010”project of the Korea Ministry of Commerce, Industry and Energy; by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (R01-2008-000-11994-0). In addition, B.H.S. acknowledges the support of KOSEF (Grant No. R01-2007-000-10068-0) and S.H. acknowledges the support of the National Research Lab Programs of the KOSEF/MEST (Grant No. R0A-2007-000-20105-0). We thank Yoojung Choi and Won Sup Choi for assistance with the KFM measurement. Supporting Information is available online from Wiley InterScience or from the author.

Publication History

  1. Issue published online: 2 JAN 2009
  2. Article first published online: 30 OCT 2008
  3. Manuscript Revised: 21 JUL 2008
  4. Manuscript Received: 3 FEB 2008

Funded by

  • Korean government (MEST). Grant Number: R01-2008-000-11994-0
  • KOSEF. Grant Number: R01-2007-000-10068-0
  • National Research Lab Programs of the KOSEF/MEST. Grant Number: R0A-2007-000-20105-0

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Keywords:

  • block copolymers;
  • charge trapping;
  • data storage;
  • micelles;
  • nanoparticles
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Tunable memory characteristics are investigated according to the metal-nanoparticle species being used in memory devices. The memory devices are fabricated using diblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization.

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