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Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer

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  • This work was supported by the Center for Materials and Processes of Self-assembly (R11-2005-048-00000-0) under the auspices of the ERC program of MEST/KOSEF; by the “SystemIC2010”project of the Korea Ministry of Commerce, Industry and Energy; by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (R01-2008-000-11994-0). In addition, B.H.S. acknowledges the support of KOSEF (Grant No. R01-2007-000-10068-0) and S.H. acknowledges the support of the National Research Lab Programs of the KOSEF/MEST (Grant No. R0A-2007-000-20105-0). We thank Yoojung Choi and Won Sup Choi for assistance with the KFM measurement. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

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Tunable memory characteristics are investigated according to the metal-nanoparticle species being used in memory devices. The memory devices are fabricated using diblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization.

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