This work was supported by the Center for Materials and Processes of Self-assembly (R11-2005-048-00000-0) under the auspices of the ERC program of MEST/KOSEF; by the “SystemIC2010”project of the Korea Ministry of Commerce, Industry and Energy; by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (R01-2008-000-11994-0). In addition, B.H.S. acknowledges the support of KOSEF (Grant No. R01-2007-000-10068-0) and S.H. acknowledges the support of the National Research Lab Programs of the KOSEF/MEST (Grant No. R0A-2007-000-20105-0). We thank Yoojung Choi and Won Sup Choi for assistance with the KFM measurement. Supporting Information is available online from Wiley InterScience or from the author.
Communication
Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer†
Article first published online: 30 OCT 2008
DOI: 10.1002/adma.200800340
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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How to Cite
Lee, J.-S., Kim, Y.-M., Kwon, J.-H., Shin, H., Sohn, B.-H. and Lee, J. (2009), Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer. Adv. Mater., 21: 178–183. doi: 10.1002/adma.200800340
- †
Publication History
- Issue published online: 2 JAN 2009
- Article first published online: 30 OCT 2008
- Manuscript Revised: 21 JUL 2008
- Manuscript Received: 3 FEB 2008
Funded by
- Korean government (MEST). Grant Number: R01-2008-000-11994-0
- KOSEF. Grant Number: R01-2007-000-10068-0
- National Research Lab Programs of the KOSEF/MEST. Grant Number: R0A-2007-000-20105-0
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