Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase-Change Memory
Version of Record online: 9 FEB 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 21, Issue 17, pages 1695–1699, May 4, 2009
How to Cite
Kao, K.-F., Lee, C.-M., Chen, M.-J., Tsai, M.-J. and Chin, T.-S. (2009), Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase-Change Memory. Adv. Mater., 21: 1695–1699. doi: 10.1002/adma.200800423
- Issue online: 22 APR 2009
- Version of Record online: 9 FEB 2009
- Manuscript Revised: 16 OCT 2008
- Manuscript Received: 12 FEB 2008
- Republic of China. Grant Number: 6-3-51-AA-5110
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