This study was supported by the National Natural Science Foundation of China (Grant 50572042). Supporting Information is available online at Wiley InterScience or from the author.
Communication
GaN Nanofibers based on Electrospinning: Facile Synthesis, Controlled Assembly, Precise Doping, and Application as High Performance UV Photodetector†
Article first published online: 30 OCT 2008
DOI: 10.1002/adma.200800529
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Wu, H., Sun, Y., Lin, D., Zhang, R., Zhang, C. and Pan, W. (2009), GaN Nanofibers based on Electrospinning: Facile Synthesis, Controlled Assembly, Precise Doping, and Application as High Performance UV Photodetector. Adv. Mater., 21: 227–231. doi: 10.1002/adma.200800529
- †
Publication History
- Issue published online: 2 JAN 2009
- Article first published online: 30 OCT 2008
- Manuscript Revised: 19 JUL 2008
- Manuscript Received: 25 FEB 2008
Funded by
- National Natural Science Foundation of China. Grant Number: 50572042
Keywords:
- doping;
- field-effect transistors;
- nanofibers;
- semiconductors;
- optical sensors

Nitride nanofibers have been synthesized based on a simple electrospinning technique for the first time. No catalysts or templates are needed in this new synthetic method. Highly oriented GaN nanofiber arrays, as well as a high-performance UV photodetector based on single GaN nanofiber assembled FET devices, can be facilely fabricated using this technique. Precise doping of other elements into the GaN nanofibers is easy by this solution-based synthetic method.

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