A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device


  • The authors thank R. Ferlita and S. Rossnagel for technical support with the preparation of the Ni/Al grid and ZnO films, respectively, and H. Hovel for technical assistance in performing the PV device measurements.


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High-quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).