Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors

Authors


  • We thank Dr. Ryan Walczak for calling our attention to the work by Yang and coworkers and are grateful to Arrowhead Research Corporation and Nanoholdings LLC for funding support. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

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In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field-effect transistor (figure) and a vertical light-emitting transistor.

Ancillary