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Keywords:

  • carbon nanotubes;
  • schottky barrier devices;
  • thin-film transistors;
  • field effect transistors;
  • light emitting transistors
Thumbnail image of graphical abstract

In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field-effect transistor (figure) and a vertical light-emitting transistor.