FT thanks the Scientific Office of the French Embassy in Israel for its support through the French International Volunteers Program. DC thanks the Israel Science Foundation, Jerusalem, and the Schmidt Minerva Centre for Supramolecular Architecture, the Harold Perlman family's historic generosity and the Minerva Foundation (Munich). DC and AK thank the US-Israel Binational Science Foundation. AK thanks the National Science Foundation (DMR-0705920) and the Princeton MRSEC of the National Science Foundation (DMR-0213706), all for partial support. DC holds the Rowland and Sylvia Schaefer Chair in Energy Research.
Electronic Current Transport through Molecular Monolayers: Comparison between Hg/Alkoxy and Alkyl Monolayer/Si(100) Junctions†
Article first published online: 22 SEP 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 20, Issue 20, pages 3931–3936, October 17, 2008
How to Cite
Thieblemont, F., Seitz, O., Vilan, A., Cohen, H., Salomon, E., Kahn, A. and Cahen, D. (2008), Electronic Current Transport through Molecular Monolayers: Comparison between Hg/Alkoxy and Alkyl Monolayer/Si(100) Junctions. Adv. Mater., 20: 3931–3936. doi: 10.1002/adma.200800659
- Issue published online: 17 OCT 2008
- Article first published online: 22 SEP 2008
- Manuscript Revised: 2 MAY 2008
- Manuscript Received: 7 MAR 2008
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