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π-σ-Phosphonic Acid Organic Monolayer/Sol–Gel Hafnium Oxide Hybrid Dielectrics for Low-Voltage Organic Transistors


  • This work is supported by the NSF-STC Program under the Agreement Number DMR-0120967. A. K.-Y. Jen thanks the Boeing-Johnson Foundation for financial support. The authors thank A. T. Chen, R. Schofield, and A. L. Briseno for their individual help. Supporting Information is available online from Wiley InterScience or from the author.


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Anthryl-alkyl-PA (π-σ-PA) self-assembled monolayers (SAMs)/hafnium oxide (HfO2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to achieve operating voltages under −1.5 V. Using π-σ-PA SAMs on sol–gel processed HfO2, pentacene-based OTFTs possess low subthreshold slopes (100 mV dec−1), high on–off current ratios (105–106), and hole mobilities as high as 0.22 cm2 V−1 s−1.

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