This work is supported by the NSF (Nos. 50725209 and 60621091), MOST (Nos. 2007CB936203, 2007AA03Z353 and 2006AA03Z402), and CAS of China. Supporting Information is available online from Wiley InterScience or from the author.
Communication
Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping†
Article first published online: 27 AUG 2008
DOI: 10.1002/adma.200800830
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Xu, Z., Lu, W., Wang, W., Gu, C., Liu, K., Bai, X., Wang, E. and Dai, H. (2008), Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping. Adv. Mater., 20: 3615–3619. doi: 10.1002/adma.200800830
- †
Publication History
- Issue published online: 25 SEP 2008
- Article first published online: 27 AUG 2008
- Manuscript Received: 26 MAR 2008
Keywords:
- boron/nitrogen co-doping;
- carbon nanotubes;
- doping;
- electronic structures;
- field-effect transistors;
- semiconductors;
- SWNTs

Electronic transport measurements on boron/nitrogen co-doped single-walled carbon nanotubes (BCN-SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN-SWNT-based field-effect transistors indicate that the as-grown BCN-SWNTs are purely semiconducting, while the undoped C-SWNTs consist of only about 70% semiconducting nanotubes.

1521-4095/asset/olbannercenter.gif?v=1&s=529a7434a29cae1cc1d6c7ab89395d70e2677ce1)
