Advanced Materials

Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Authors

  • Zhi Xu,

    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
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  • Wengang Lu,

    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
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  • Wenlong Wang,

    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
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  • Changzhi Gu,

    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
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  • Kaihui Liu,

    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
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  • Xuedong Bai,

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
    • Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China).
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  • Enge Wang,

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China)
    • Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190 (P. R. China).
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  • Hongjie Dai

    1. Department of Chemistry and Laboratory for Advanced Materials Stanford University, Stanford, CA 94305 (USA)
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  • This work is supported by the NSF (Nos. 50725209 and 60621091), MOST (Nos. 2007CB936203, 2007AA03Z353 and 2006AA03Z402), and CAS of China. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

Electronic transport measurements on boron/nitrogen co-doped single-walled carbon nanotubes (BCN-SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN-SWNT-based field-effect transistors indicate that the as-grown BCN-SWNTs are purely semiconducting, while the undoped C-SWNTs consist of only about 70% semiconducting nanotubes.

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