Organic Light-Emitting Field-Effect Transistors Operated by Alternating-Current Gate Voltages

Authors

  • Takeshi Yamao,

    Corresponding author
    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)
    • Department of Macromolecular Science and Engineering Graduate School of Science and Technology, Kyoto Institute of Technology Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan).
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  • Yasuhiro Shimizu,

    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)
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  • Kohei Terasaki,

    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)
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  • Shu Hotta

    1. Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)
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  • The authors thank the New Material Devices R&D Center, Rohm Co., Ltd. for rendering the device substrates available to our studies. The authors thank Prof. Masahiro Yoshimoto for his valuable discussions and comments on the device-operation mechanism. Thanks are also due to Dr. Reiko Azumi and Mr. Satoshi Ota for their helpful discussions and suggestions on the growth of the single crystals. This work was supported by the Grant-in-Aid for Science Research in the Priority Area “Super-Hierarchical Structures” (No. 17067009) from the Ministry of Education, Culture, Sports, Science and Technology, Japan. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

original image

Organic light-emitting field-effect transistors are operated by a novel method characterized by the application of ac voltages to the gate electrode. This prompts carrier injection from both source and drain electrodes into the organic layer (a thin film or a crystal) without altering the device constitution. Stronger emissions are observed from the device with increasing gate voltage frequencies.

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