Advanced Materials

Molecular Storage Elements for Proton Memory Devices

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Abstract

Non-volatile information storage using a molecular element comprising a proton-conducting polymeric layer (PCL) and a proton-trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion-blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (−) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.

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