Communication

Atomic Layer Deposition of ZnO in Quantum Dot Thin Films†

  1. Alexandre Pourret1,
  2. Philippe Guyot-Sionnest1,*,
  3. Jeffrey W. Elam2,*

Article first published online: 30 OCT 2008

DOI: 10.1002/adma.200801313

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 2, pages 232–235, January 12, 2009

Additional Information

How to Cite

Pourret, A., Guyot-Sionnest, P. and Elam, J. W. (2009), Atomic Layer Deposition of ZnO in Quantum Dot Thin Films. Adv. Mater., 21: 232–235. doi: 10.1002/adma.200801313

Author Information

  1. 1

    James Franck Institute, The University of Chicago 929 E. 57th Street, Chicago IL 60637 (USA)

  2. 2

    Argonne National Laboratory 9700 S Cass Ave, Argonne, IL 60439 (USA)

*James Franck Institute, The University of Chicago 929 E. 57th Street, Chicago IL 60637 (USA).

  1. †

    AP was supported by the DOE under grant DE-FG02-06ER46326. This manuscript has been created in part by the University of Chicago – Argonne, LLC as Operator of Argonne National Laboratory (“Argonne”) under Contract No. DE-AC02-06CH11357 with the U.S. Department of Energy.

Publication History

  1. Issue published online: 2 JAN 2009
  2. Article first published online: 30 OCT 2008
  3. Manuscript Revised: 10 JUL 2008
  4. Manuscript Received: 12 MAY 2008

Funded by

  • DOE. Grant Number: DE-FG02-06ER46326

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Keywords:

  • atomic layer deposition;
  • quantum dot films;
  • conductive materials;
  • zinc oxide
Thumbnail image of graphical abstract

CdSeS/CdS/ZnS quantum dot thin films subjected to ZnO atomic layer deposition at 100°C shows photoluminescence (PL) modulation. The PL is quenched during each exposure to diethyl zinc. However, the PL is restored upon subsequent exposure to water.

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