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Atomic Layer Deposition of ZnO in Quantum Dot Thin Films

Authors


  • AP was supported by the DOE under grant DE-FG02-06ER46326. This manuscript has been created in part by the University of Chicago – Argonne, LLC as Operator of Argonne National Laboratory (“Argonne”) under Contract No. DE-AC02-06CH11357 with the U.S. Department of Energy.

Abstract

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CdSeS/CdS/ZnS quantum dot thin films subjected to ZnO atomic layer deposition at 100°C shows photoluminescence (PL) modulation. The PL is quenched during each exposure to diethyl zinc. However, the PL is restored upon subsequent exposure to water.

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