Communication

Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator†

  1. Lars Herlogsson1,
  2. Yong-Young Noh2,3,
  3. Ni Zhao2,
  4. Xavier Crispin1,
  5. Henning Sirringhaus2,
  6. Magnus Berggren1,*

Article first published online: 21 OCT 2008

DOI: 10.1002/adma.200801756

Issue

Advanced Materials

Advanced Materials

Volume 20, Issue 24, pages 4708–4713, December 17, 2008

Additional Information

How to Cite

Herlogsson, L., Noh, Y.-Y., Zhao, N., Crispin, X., Sirringhaus, H. and Berggren, M. (2008), Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator. Adv. Mater., 20: 4708–4713. doi: 10.1002/adma.200801756

Author Information

  1. 1

    Department of Science and Technology, Linköpings Universitet Campus Norrköping, SE-601 74 Norrköping (Sweden)

  2. 2

    Cavendish Laboratory, University of Cambridge J. J. Thomson Avenue, Cambridge CB3 OHE (UK)

  3. 3

    Convergence Components & Materials Laboratory Electronics and Telecommunications Research Institute (ETRI) 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350 (Republic of Korea)

*Department of Science and Technology, Linköpings Universitet Campus Norrköping, SE-601 74 Norrköping (Sweden).

  1. †

    The authors gratefully acknowledge the Swedish Foundation for Strategic Research (COE@COIN), the Knut and Alice Wallenberg Foundation, VINNOVA, the Royal Swedish Academy of Sciences and the Swedish Research Council for financial support of this project. This work was also supported by the EU Integrated Project NAIMO (No. NMP4-CT-2004-500355).

Publication History

  1. Issue published online: 16 DEC 2008
  2. Article first published online: 21 OCT 2008
  3. Manuscript Received: 23 JUN 2008

Funded by

  • Swedish Foundation for Strategic Research (COE@COIN)
  • Knut
  • Alice Wallenberg Foundation
  • VINNOVA
  • Royal Swedish Academy of Sciences
  • Swedish Research Council

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Keywords:

  • nanotechnology;
  • organic electronics;
  • organic field-effect transistors;
  • polyelectrolytes;
  • printed electronics
Thumbnail image of graphical abstract

A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.

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