Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator

Authors

  • Lars Herlogsson,

    1. Department of Science and Technology, Linköpings Universitet Campus Norrköping, SE-601 74 Norrköping (Sweden)
    Search for more papers by this author
  • Yong-Young Noh,

    1. Cavendish Laboratory, University of Cambridge J. J. Thomson Avenue, Cambridge CB3 OHE (UK)
    2. Convergence Components & Materials Laboratory Electronics and Telecommunications Research Institute (ETRI) 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350 (Republic of Korea)
    Search for more papers by this author
  • Ni Zhao,

    1. Cavendish Laboratory, University of Cambridge J. J. Thomson Avenue, Cambridge CB3 OHE (UK)
    Search for more papers by this author
  • Xavier Crispin,

    1. Department of Science and Technology, Linköpings Universitet Campus Norrköping, SE-601 74 Norrköping (Sweden)
    Search for more papers by this author
  • Henning Sirringhaus,

    1. Cavendish Laboratory, University of Cambridge J. J. Thomson Avenue, Cambridge CB3 OHE (UK)
    Search for more papers by this author
  • Magnus Berggren

    Corresponding author
    1. Department of Science and Technology, Linköpings Universitet Campus Norrköping, SE-601 74 Norrköping (Sweden)
    • Department of Science and Technology, Linköpings Universitet Campus Norrköping, SE-601 74 Norrköping (Sweden).
    Search for more papers by this author

  • The authors gratefully acknowledge the Swedish Foundation for Strategic Research (COE@COIN), the Knut and Alice Wallenberg Foundation, VINNOVA, the Royal Swedish Academy of Sciences and the Swedish Research Council for financial support of this project. This work was also supported by the EU Integrated Project NAIMO (No. NMP4-CT-2004-500355).

Abstract

original image

A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.

Ancillary