The authors thank Profs. Hyungjun Kim and Byeong-Joo Lee for helpful discussions. This research was supported by Nano R&D program through the KOSEF (2007-02864), the “System IC 2010” program by the MOCIE, the MOST-AFOSR NBIT 2007 Program funded through the KICOS (No. K20716000006-07A0400-00610), the Korean Research Foundation Grant from MOEHRD (KRF-2005-005-J13103), and Samsung Electronics. Supporting Information is available online from Wiley InterScience or from the author.
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Communication
Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts†
Article first published online: 15 OCT 2008
DOI: 10.1002/adma.200801764
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Kang, K., Kim, D. A., Lee, H.-S., Kim, C.-J., Yang, J.-E. and Jo, M.-H. (2008), Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts. Adv. Mater., 20: 4684–4690. doi: 10.1002/adma.200801764
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Publication History
- Issue published online: 16 DEC 2008
- Article first published online: 15 OCT 2008
- Manuscript Revised: 11 AUG 2008
- Manuscript Received: 24 JUN 2008
Funded by
- KICOS. Grant Number: K20716000006-07A0400-00610
- Korean Research Foundation MOEHRD. Grant Number: KRF-2005-005-J13103
- Samsung Electronics
Keywords:
- germanium;
- nanowires;
- nanowire growth
Cu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts.