Communication

Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts†

  1. Kibum Kang,
  2. Dong An Kim,
  3. Hyun-Seung Lee,
  4. Cheol-Joo Kim,
  5. Jee-Eun Yang,
  6. Moon-Ho Jo*

Article first published online: 15 OCT 2008

DOI: 10.1002/adma.200801764

Issue

Advanced Materials

Advanced Materials

Volume 20, Issue 24, pages 4684–4690, December 17, 2008

Additional Information

How to Cite

Kang, K., Kim, D. A., Lee, H.-S., Kim, C.-J., Yang, J.-E. and Jo, M.-H. (2008), Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts. Adv. Mater., 20: 4684–4690. doi: 10.1002/adma.200801764

Author Information

  1. Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea)

*Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790-784 (Korea).

  1. †

    The authors thank Profs. Hyungjun Kim and Byeong-Joo Lee for helpful discussions. This research was supported by Nano R&D program through the KOSEF (2007-02864), the “System IC 2010” program by the MOCIE, the MOST-AFOSR NBIT 2007 Program funded through the KICOS (No. K20716000006-07A0400-00610), the Korean Research Foundation Grant from MOEHRD (KRF-2005-005-J13103), and Samsung Electronics. Supporting Information is available online from Wiley InterScience or from the author.

Publication History

  1. Issue published online: 16 DEC 2008
  2. Article first published online: 15 OCT 2008
  3. Manuscript Revised: 11 AUG 2008
  4. Manuscript Received: 24 JUN 2008

Funded by

  • KICOS. Grant Number: K20716000006-07A0400-00610
  • Korean Research Foundation MOEHRD. Grant Number: KRF-2005-005-J13103
  • Samsung Electronics

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